Turn off type semiconductor device, method of producing the same and the power conversion device employing the same.

摘要

In a turn off type semiconductor device, an n-type emitter layer (16) is divided into a plurality of elements (16a) by trenches (17). A silicide layer (3) of a high melting point metal is provided on a p-type layer (15) adjacent to the individual elements (16a) of the n-type emitter layer (16) on a bottom of each of the trenches (17). A gate electrode (4) is provided on the associated silicide layer so as to surround the plurality of elements (16a) of the n-type emitter layer (16) obtained by the division of the emitter layer. An insulator (5) is filled in each of the trenches (17) dividing the n-type emitter layer (16) surrounded by the gate electrode (4). A cathode electrode (6) is provided on both the insulators (5) and the n-type emitter layer (16). <IMAGE>