| 摘要 |
<p>PURPOSE:To improve the reliability of a non-volatile semiconductor memory and a system by allowing the semiconductor memory itself to count up data rewriting frequency. CONSTITUTION:The non-volatile semiconductor memory is provided with a counter 2 for counting up rewriting frequency, a counter memory 3 constituted of a non-volatile semiconductor memory cell for storing the data rewriting frequency and a control circuit 1 for controlling these counters 2, 3. At the time of erasing data, the count value of the counter 2 is increased to count up the rewriting frequency and store it. Consequently, the rewriting frequency can easily be managed and the highly reliable non-volatile semiconductor memory having a high added value can be obtained.</p> |
