| 摘要 |
PURPOSE:To obtain a semiconductor device which is suitable for micro- miniaturization by providing a metallic material consisting of a metal or a metal compound in which the source and drain have part overlapping with a gate electrode, providing a high concentration semiconductor layer of a first conductivity type to a semiconductor region which is in contact with the metallic material in the drain side and enabling ohmic connection between the drain and semiconductor region. CONSTITUTION:A gate electrode 4 consisting of a field oxide film(SiO3) 2 specifying an active region, a gate oxide film (SiO3) 3 and an n<+> polycrystalline silicon is formed on a low concentration n-type semiconductor board 1 and a titanium silicon (TiSi2) 6 is formed symmetrically for source/drain within the board 1, providing the part overlapping with the gate electrode. A high concentration n<+> type semiconductor layer 5 and insulating layer (BPSG/SiO2) 7 are formed surrounding TiSi2 6 on the drain side. These are connected to an electrode wiring layer 9 through a contact hole 8.
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