发明名称 |
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE BY MEGA-ELECTRON VOLT ION IMPLANTATION |
摘要 |
A method of manufacturing a semiconductor device includes forming desired semiconductor elements in a major surface region of a semiconductor substrate, and ion-implanting a selected element into the semiconductor substrate from the major surface of the substrate to form an ion-implanted layer by the implanted element. A heat treatment is performed to the ion-implanted substrate, causing the ion-implanted layer to getter contaminant heavy metals.
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申请公布号 |
US5098852(A) |
申请公布日期 |
1992.03.24 |
申请号 |
US19900548548 |
申请日期 |
1990.07.05 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
NIKI, YOSHIKO;NADAHARA, SOICHI;WATANABE, MASAHARU |
分类号 |
H01L21/265;H01L21/322;H01L21/8242;H01L27/10;H01L27/108 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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