Method for forming a pattern of a photoresist

摘要

An ultraviolet light sensitive photoinitiator composition that includes at least one anthracene derivative represented by the formula: <IMAGE> wherein X is CH=CH2 or -(-CH2-)-nO-(-R) with R being H or <IMAGE> wherein each RI, RII and RIII individually is selected from the group of alkyl, alkenyl, aryl, <IMAGE> and <IMAGE> wherein each RIV, RV and RVI individually is selected from the group of alkyl, alkenyl and aryl; wherein m is an integer of 0 to 4, p is an integer of 0 to 4; and is n being 1 to 2; and onium salt; and an organic solvent. The composition is used for cationic polymerization of cationic polymerizable materials including in the formation of a pattern of a photoresist. Also certain novel epoxy-functionalized organosilicons are provided that are sensitive to radiation including E-beam radiation and exhibit resistance to oxygen reactive ion etching.