发明名称 |
Method for reducing hot-electron-induced degradation of device characteristics |
摘要 |
Hot-electron-induced degradation of a semiconductor device (10) is reduced by converting the silicon surface (18) to a fluorinated-silicon compound interface region (23). The fluorinated-silicon compound interface region (23) is formed by etching the device (10) in a fumer (30) using anhydrous hydrofluoric acid. After a sacrificial oxide is grown over the silicon surface (18), the device (10) is placed in a container (32). A mixture of nitrogen, moistened nitrogen and nitrogen/anhydrous hydrofluoric acid is injected into the container (32) to conduct the etch. The anhydrous hydrofluoric acid converts the silicon to a fluorinated-silicon compound, such as H2SiF6, and water. The fluorinated-silicon compound interface region (23) has stronger molecular bonds than the typical hydrogen-silicon formed at the oxide/silicon interface and is, therefore, less likely to be broken apart by hot-electrons.
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申请公布号 |
US5098866(A) |
申请公布日期 |
1992.03.24 |
申请号 |
US19880290073 |
申请日期 |
1988.12.27 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
CLARK, DAVID R.;TIPTON, CHARLOTTE M. |
分类号 |
H01L21/02;H01L21/28;H01L21/306;H01L29/51 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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