Junction between metal and zincblende-type III-V compound semiconductor and manufacturing method thereof

摘要

The method of manufacturing the metal-semiconductor junction in accordance with the present invention includes the step of forming a 2x2 surface superstructure in an ultrahigh vacuum by removing an oxide layer by means of a heat cleaning at temperatures not lower than 600 DEG C. while irradiating a (111) A or (111) B surface of a zincblende-type III-V compound semiconductor substrate with a beam of a group V element, the step of cooling the substrate down to room temperature while maintaining the surface superstructure and the step of depositing a metal on the surface.