| 摘要 |
PURPOSE:To enable a thin film of ferroelectric material or superconductor to be formed on a substrate orientating its [001] axis vertical to the substrate by a method wherein the substrate is formed of specific material, and a BaTiO3 film is formed thereon through sputtering performed under a certain condition. CONSTITUTION:A BaTiO3 thin film is formed on a substrate of SiO2, Si, or SiO2/Si orientating its [001] axis vertical to the substrate, and the substrate is sputtered under a gas pressure of 6-50mTorr at a temperature of 300-600 deg.C, whereby the BaTiO3 thin film is epitaxially grown as orientated making its [001] axis vertical to the surface of the substrate. A substrate on which a BaTiO3 thin film has been formed is used, which acts on PbTiO3, Pb(TiZr)O3, or YBa2Cu3O7 to orientate its [001] axis vertical to the surface of the substrate, so that a ferroelectric thin film or a superconductive thin film large in critical current density can be formed. |
