| 摘要 |
PURPOSE:To improve an electrode structure in reflectivity and to make the most of light by a method wherein an electrode film is partially provided, light absorbed by an alloyed layer is lessened, and a metal thin film of high reflectivity is formed on a prescribed region located on a die-bonded side. CONSTITUTION:An electrode structure is composed of a light emitting layer 4 sandwiched between clad layers 2 and 3 formed of semiconductor large in energy gap, a metal thin film 7 of high reflectivity is formed on a region of a die-bonded surface of the electrode structure other than an ohmic electrode part, whereby some of light leaking into the P-type clad layer 3 from the light emitting layer 4 reaches to a reflective metal thin film 7 avoiding an alloyed layer 6 and reflected by the film 7, the reflected light ray (m) is reflected forward, and the reflected light ray (n) is reflected obliquely forward and reflected forward again by a reflecting surface 9b of a metal stem 9. Therefore, light absorbed by an alloyed layer is lessened, and light can be effectively utilized taking advantage of the reflection of light by a metal thin film of high reflectivity. |
