| 摘要 |
PURPOSE:To keep a transparent film unchanged in film quality and to prevent a semiconductor film from deteriorating in characteristics by a method wherein an impurity undoped layer is provided to a transparent conductive film on the semiconductor film side to serve as a block layer which stops impurities from diffusing. CONSTITUTION:An impurity doped layer 2a and an undoped layer 2b are successively laminated on a light transmissive insulating substrate 1 to form a transparent conductive film 2, and a photodetective semiconductor film 3 on which the transmitted light impinges from an insulating substrate side is provided to the undoped layer 2b of the transparent conductive film 2, whereby a undoped layer is provided to the side of a transparent conductive film which confronts a semiconductor film, and impurities contained in the transparent conductive film are prevented from diffusing into the semiconductor film even if the transparent conductive film is made to stand under a high temperature. By this setup, the transparent conductive film is lessened in sheet resistance by impurities without deteriorating the semiconductor film in characteristics, so that the semiconductor film can be kept unchanged in characteristics. |
