| 摘要 |
PURPOSE:To avoid the troubles due to the generation of static electricity such as breakdown of a work mask, covering of emulsion work mask, breakdown of a master mask and defective exposure development, etc., by providing a semiconductor layer on the surface of a master mask or a work mask. CONSTITUTION:A semiconductor layer 3 is formed on the surface of a master mask 10 having patterns 2 formed of a light interrupting material such as chrome, etc., on a substrate 1 while the surface and the emulsion layer 6 coated on the substrate 5 of an emulsion work mask 11 are joined by vacuum suction to be irradiated with light for making a latent image comprising unexposed parts 8 and exposed parts 9. Later, both masks 10, 11 are separated from each other to transfer patterns from the master mask 10 to the work mask 11 by developing the work mask 11. Through these procedures, the pattern transfer from the emulsion mask 11 to a wafer can be performed likewise. |
