| 摘要 |
PURPOSE:To substantially incorporate a semiconductor and an electrode into one united body by a method wherein a transparent electrode is formed on the surface of the semiconductor and then they are annealed by irradiating a laser beam or a similar high-powered optical energy. CONSTITUTION:After having formed the transparent electrode on the surface of the semiconductor, the following processes are performed to have them united in one body. Substrates 11-11'' which have been constituted as above are moved from an inlet chamber 20 to an outlet chamber 21 in a treatment chamber 23 using a loader, and the temperature inside the chamber 23 is maintained at 300-700 deg.C using a high-frequency induction furnace and a low-temperature annealing furnace 25 provided in the chamber 23. At the same time, H2 is run out from a valve 15, He from a valve 16 and HCl from a valve 17 and they are discharged by a vacuum pump 19 through an intermediate of a needle valve 18. Thus, the substrate 11 is heated, the laser beam emitted from a laser device 12, provided outside the chamber 23, is irradiated to the substrate 11 through a medium of a mirror 13 and a low- temperature annealing is performed. |
