| 摘要 |
PURPOSE:To enable the quantum fine line and quantum box with the shape and directivity precisely controlled to be obtained by a method wherein rugged parts are formed on the first kind semiconductor substrate and then a crystal layer comprising the second kind semiconductor crystal layer is selectively and epitaxially deposited only on the side-wall parts of the rugged parts. CONSTITUTION:The line and space comprising multiple rugged parts is formed on the surface of a GaAs substrate 1. Next, a dielectric film e.g. an SiO2 9 is deposited on the surface in the vertical direction by sputtering process. At this time, the SiO2 9 is not deposited on the sidewall parts of the rugged parts on the substrate 1. Besides, an AlAs layer 8 is deposited on the SiO2 9. At this time, the layer 8 is selectively formed only on the sidewall parts of the rugged parts on the substrate 1. Furthermore, after selectively removing the SiO2 9 only, another GaAs layer 3 is deposited again lastly. Through these procedures, almost perfect quantum wire structure in excellent shape and directivity can be erected. |
