| 摘要 |
<p>PURPOSE:To eliminate an electrostatic breakdown and to enhance the uniformity of a plasma treatment by a method wherein the rear of a wafer is brought into close contact with a dielectric installed at the peripheral part on a wafer-mounting face and a gap formed between the wafer-mounting face and the wafer is filled with a heat-transfer gas. CONSTITUTION:A wafer 70 is placed on a wafer-mounting face 13a including the surface 15a of a dielectric 15; a plasma treatment gas is supplied to the inside of a treatment chamber 12; a part of the gas is evacuated from an evacuation tube 21; the pressure inside the treatment chamber 12 is kept definite. Then, high-frequency electric power is supplied to a wafer electrode 13; a self-bias voltage is generated between the wafer electrode 13 and the wafer 70; static electricity is generated between the wafer electrode 13 and the wafer 70; static electricity is generated at the dielectric 15. Thereby, the peripheral part on the rear 70b of the wafer 70 is brought into close contact with the surface 15a of the dielectric 15. Very small gaps 22 formed between the wafer-mounting face 13a and the rear 70b of the wafer 70 are filled with a heat- transfer gas G via a plurality of opening parts 17a in order to increase heat-transfer property. As a result, the wafer 70 which is being plasma-treated is cooled, and the temperature of the wafer 70 is set to a temperature which is nearly the same as the temperature of the wafer electrode 13.</p> |
