| 摘要 |
PURPOSE:To attain the resolving power equivalent to the resolving power in the case of execution of exposing with light of a shorter wavelength even in the case of execution of the exposing with the light of a longer wavelength by incorporating org. matter having large epsilonmu into the above photoresist when the dielectric constant is designated as epsilon and the magnetic permeability as mu. CONSTITUTION:A substrate formed with a prescribed pattern to be formed is designated as 1, the photoresist contg. the org. matter having the large muepsilonas 2 and the mask for exposing as 3. If the light 4 for exposing is made incident on the photoresist from the inside of vacuum, equation is obtd. where the wave length and velocity of the lighty 4 in the vacuum are respectively designated as lambda and c and the wavelength and velocity of the lighty 4 in the photoresist 2 respectively as lambda' and c'. From the equation, the wavelength lambda' is (epsilon0mu0)<1/2>/(muepsilon)<1/2> times wavelength lambda and lambda' can be sufficiently diminished by making muepsilon sufficiently large. The wavelength lambda' is sufficiently decreased in such a manner, by which the infiltrating of the light 4 to the lower side of the mask 3 is extremely lessened. Namely, the diffraction of the lighty 4 by the mask 3 is extremely lessened. |
