DRY-TYPE DEVELOPING APPARATUS

摘要

PURPOSE:To execute a reactive ion etching operation with large anisotropy by a method wherein microwaves are used to generate the plasma of a gas containing oxygen and low-frequency AC electric power is applied. CONSTITUTION:A prescribed gas is introduced into a process chamber 1 from a gas introduction hole 2; on the other hand, the inside of the chamber is evacuated by using a vacuum pump 3 for evacuation use via a valve 4. Microwaves in an H 001 mode at 2.45 GHz are introduced into the process chamber 1 form microwave oscillators 5A and 5B; the plasma of a gas containing oxygen is generated. An electrode 11 which holds a semiconductor wafer 10 to be treated is installed inside the process chamber. The electrode 11 is cooled by a coolant from a cooler 14. AC electric power at 20 to 200KHz is applied to the electrode 11 from a low-frequency power supply 15; oxygen ions in the microwave plasma are pulled into a resist film formed on the semiconductor wafer 10; an anisotropic etching operation is executed.