| 摘要 |
PURPOSE:To decrease a floating capacity and to greatly improve a black matrix effect by coating a picture element electrode substrate side exclusive of the picture element electrode positions on the substrate side with light shielding films consisting of an org. material. CONSTITUTION:A semiconductor element array is constituted by disposing plural signal lines 7, plural scanning lines 18 orthogonal therewith, the picture element electrodes 6 disposed at the respective intersected points of these wirings, drain electrodes 15 which are continuous with the signal lines 7 and impress image signals to the electrodes 6, and gate electrodes 12 which are continuous with the scanning lines 18 and impress the signals to the electrodes 6. The gate electrodes 12, gate insulating films 13, amorphous silicon films 14, the picture element electrodes 6, the source electrodes and drain electrodes 15, and insulating films 16 are successively laminated on a picture element electrode substrate 1. Further, a life off photoresist 20 for forming the light shielding films 19 is patterned on the insulating film 16 and in succession, the light shielding films 19 are deposited and thereafter, the light shielding films 19 are formed on the TFT parts and the signal lines 7 as well as the scanning lines 18 by a lift off method. |
