发明名称 IMPROVED MEMORY SYSTEM
摘要 <p>Memory technologies for storing include RAMS and CCDs. Adaptive memory capability and memory servo capability improve memory characteristics. In a RAM embodiment, a detector (220B, 220A) is used to detect a memory address condition (217) and to control the memory (222) and the memory address register (218) in response thereto. In a CCD embodiment, a detector (220A, 220B) is used to detect a memory reference signal (217) and to refresh the memory signals (221A, 221B, 221) in response thereto. Improved memory refresh, memory performance, and memory capacity enhance system characteristics. Improved memory architecture provides advantages of increased speed, lower cost, and efficiency of implementation. Information stored in memory can be scanned out at a rate greater than the addressing rate associated with the memories. This permits higher speed operation with lower cost memories. Use of an output buffer, such as a FIFO, permits normalization of memory clock rates.</p>
申请公布号 WO9204673(A1) 申请公布日期 1992.03.19
申请号 WO1991US06285 申请日期 1991.09.03
申请人 HYATT, GILBERT, P. 发明人 HYATT, GILBERT, P.
分类号 B60R16/02;B60R16/037;F21V23/00;G01S7/52;G01S15/89;G02F1/133;G03F9/00;G04G99/00;G05B19/35;G05B19/408;G05B19/409;G05B19/4093;G05B19/414;G06F3/038;G06F12/00;G06F12/02;G06F13/16;G06J1/00;G07G1/12;G09G5/18;G09G5/20;G10L19/00;G11C11/56;G11C19/28;G11C19/36;G11C27/00;G11C27/02;G11C27/04;H03H17/02 主分类号 B60R16/02
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