| 摘要 |
PURPOSE:To enable the formation of an accurate through hole without etching by forming a hole at an insulating film by a lifting-off method used for the formation of a metallic wire. CONSTITUTION:A metallic film is formed by a vacuum deposition or the like on the surface of a semiconductor substrate 11 on which an element is formed, and the first wiring layer 14 is formed by photoetching. Then, a resist 15 is formed on a through hole part connected to the second wiring layer, an SiO2 film 16 is formed at a low temperature on the overall surface of the substrate, the resist 15 is removed by a lifting-off method, and a through hole is thus formed. Subsequently, a metallic film 18 is formed, is etched with a resist 19, and the second wiring layer 20 is formed. Thus, a multilayer wire can be readily and finely formed. |
