| 摘要 |
PURPOSE:To enable the switching at the desired speed to a driving signal by inserting a gate charge/discharge circuit, which has a first electrode in contact with both the first conductivity type semiconductor layer and the second conductivity type semiconductor region and has a second electrode in contact with only the first conductivity type semiconductor layer. CONSTITUTION:A charge/discharge circuit 20, which consists of a diode 22 and resistance 24 connected in parallel, is interposed between the gate 10 of a power MOSFET 10 and a terminal 16. An n-type semiconductor layer 44 is formed through an oxide film 40 on an n-type silicon substrate 30, and a first electrode 50 is formed through a silicon oxide film 48 on a semiconductor layer 44, wherein a p-type impurity region 46 is made, and this first electrode contacts with both the semiconductor layer 44 and the impurity region 46. Though a second electrode 52 is made on the oxide film 48, it contacts only the semiconductor layer 44. The diode 22 is constituted of the pn junction where the region 46 and the layer 44 join with each other, and for the resistance 24, the value can be freely selected by changing the thickness. |
