| 摘要 |
PURPOSE:To suppress the drop of the temperature stability by carrier overflow and preserve the long life property of a projector and the adaptability to crystal deformation structure by crystal-growing a Gs(x)In(1-x)As(y)P(1-y) active layer, whose lattice approximately conforms to an InP substrate, on an n-type InP clad layer. CONSTITUTION:An n-type InP clad layer 2 is made on an InP substrate 1, and a GaInAsP active layer 3, whose lattice approximately conforms to that of the substrate 1, is made thereon an further a p-type AlInAs clad layer 4, whose lattice approximately conforms to the substrate 1, is made thereon to catch the active layer 3 between itself and the clad layer 2. When current injection is performed by forward bias, the quantity of hetero barriers is the same as before on the side of a valence band, but it becomes large than the case of InP barriers by about 50% on the side of a conduction band. As a result, it can compensate the amount of the effective mass of electrons falling by AlGaAs/GaAs, and trouble such as the case of doping InP with p-type impurities in high concentration does not occur, and the carrier overflow of the electrons can be suppressed. |
