SEMICONDUCTOR LIGHT EMITTER

摘要

PURPOSE:To improve the optical coupling efficiency of a light emitting diode and a light receiving element and make application to the light source of an optical printer possible by using a multiple quantum well layer as the light receiving layer of the edge light receiving type light receiving element and forming the light emitting layer of the edge light emittion light emitting diode of a layer made by mixture of the crystals of the multiple quantum well layer. CONSTITUTION:The light receiving layer 103 of a semiconductor light emitter integrated monolithically on a semiconductor substrate 101 and divided by a separation groove 108 forms an edge light receiving type light receiving element B made of an element including a multiple quantum well layer. The light emitting layer 107 made by mixture of the crystals of the multiple quantum well layer has a wider forbidden band than the light receiving layer 103 and a diode including the layer 107 and having a shorter light emitting wavelength than the wavelength of the light absorption end of the light receiving layer 103 forms an edge light emitting type light emitting diode A. Thereby a light from the light emitting layer 107 has a shorter wavelength than the light absorption end of the light receiving layer 103 and is received effectively by the light receiving layer 103, improving the optical coupling efficiency of the edge light emitting type LED A and the edge light receiving type light receiving element B.