发明名称 |
PROCESS FOR THE SELECTIVE ENCAPSULATION OF AN ELECTRICALLY CONDUCTIVE STRUCTURE IN A SEMICONDUCTOR DEVICE |
摘要 |
A process for fabricating an improved semiconductor device (10) is disclosed wherein a protective layer of Al2O3 (24) is selectively formed to encapsulate a refractory-metal conductor. (14) To form the Al2O3 layer,(24) first an Al/refractory-metal alloy (22) is selectively formed on the surface of the refractory-metal conductor, (14) then the Al/refractory-metal alloy (22) is reacted with O2. The resulting Al2O3 encapsulation layer acts (24) as an O2 diffusion barrier preventing the oxidation of the refractory-metal during subsequent process steps used to fabricate the semiconductor device. In addition, the Al2O3 layer (24) improves the mechanical compatibility of the refractory-metal conductor (14) with other materials used to construct the semiconductor device, such as, for example, improving the adhesion of an overlying layer of passivation glass to the refractory-metal conductor (14). <IMAGE> |
申请公布号 |
EP0462700(A3) |
申请公布日期 |
1992.03.18 |
申请号 |
EP19910304498 |
申请日期 |
1991.05.20 |
申请人 |
MOTOROLA INC. |
发明人 |
PINTCHOVSKI, FAIRVEL;YEARGAIN, JOHN ROBERT;FILIPIAK, STANLEY M. |
分类号 |
H01L21/316;H01L23/532;H01L29/78;(IPC1-7):H01L21/48 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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