Semiconductor memory device having means for monitoring bias voltage.

摘要

A semiconductor memory device having a power supply terminal (Vcc), a circuit ground (Vss), a plurality of memory cells (1-1 ... 1-n) for storing data, bias voltage generating means (24) connected between the power supply terminal (Vcc) and circuit ground (Vss), for applying a bias voltage to the memory cells (1-1 ... 1-n), and monitor means (4) for monitoring the bias voltage. <IMAGE>