发明名称 |
A method of passivating etched mirror facets of semiconductor lasers. |
摘要 |
A method of passivating etched mirror facets of semiconductor laser diodes for enhancing device reliability. The etched mirror facet is first subjected to a wet-etch process to substantially remove any native oxide as well as any surface layer which may have been mechanically damaged during the preceding mirror etch process. Then, a passivation pre-treatment is applied whereby any residual oxygen is removed and a sub-monolayer is formed which permanently reduces the non-radiative recombination of minority carriers at the mirror facet. Finally, the pre-treated mirror surface is coated with a passivation layer to avoid any environmental effect on the mirror.
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申请公布号 |
EP0474952(A1) |
申请公布日期 |
1992.03.18 |
申请号 |
EP19900810695 |
申请日期 |
1990.09.14 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BUCHMANN, PETER;WEBB, DAVID J.;VETTIGER, PETER |
分类号 |
H01L21/308;H01L21/306;H01L21/314;H01L21/316;H01L21/318;H01S5/00;H01S5/02;H01S5/028 |
主分类号 |
H01L21/308 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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