| 摘要 |
PURPOSE:To avoid defective cutting of a redundant fuse element by a method wherein the redundant fuse element is composed of the same conductor layer as the plate electrode of the stacked structure information storing capacitance element of a memory cell to which a fixed potential is applied. CONSTITUTION:A semiconductor integrated circuit device has a DRAM composed of a memory cell M which is composed of a series circuit of a memory cell selecting MIS-FET Qs and a stacked structure information storing capacitance element C and a redundant fuse element F, which is cut by a laser cutting method, of a redundant circuit which helps the memory cell. The redundant fuse element F is composed of the same conductive layer as the plate electrode 14 of the stacked structure information storing capacitance element C of the memory cell M to which a fixed potential is applied. With this constitution, the plate electrode 14 of the stacked structure information storing capacitance element C of the memory cell M is made of the mate material of an uppermost layer in a DRAM manufacturing process and the redundant fuse element F can be isolated from the main surface of a p--type semiconductor substrate 1, so that the defective cutting of the redundant fuse care be avoided and, further, damages against the semiconductor substrate side can be suppressed. |
