发明名称 PROCESS FOR PRODUCING INSULATING AND PATCHING MATERIAL FOR SILICON BASES
摘要 <p>The insulating and patching material is intended for repairing ferro-concrete and concrete constructions in the chemical industry when handling organic materials or radioactive waste products. First sulphur is melted at a temperature of 140 degrees C and then it is slowly cooled down to a temperature of 70 to 80 degrees C and heated up again to 140 degrees C, or un-melted sulphur is modified by adding 0.5 to 1.0%, depending on the weight of sulphur, of a mixture of polymerization and polycondensation residues on the basis of the terephthalic acid during the production of plastic materials, including plasticizers and solvents and together with a mineral filler; the weight ratio of sulphur to the mineral filler is 1:2 to 1.10, it is mixed for 1 to 3 minutes at a temperature of 140 degrees C and then set. Silica sand, ash and gravel sand or corundum are used as the mineral filler.</p>
申请公布号 CS9003424(A3) 申请公布日期 1992.03.18
申请号 CS19900003424 申请日期 1988.08.17
申请人 RIEDLOVA BLANKA ING.;DOHNALEK JIRI ING. CSC.;DOLECEK KAREL ING. 发明人 RIEDLOVA BLANKA ING.;DOHNALEK JIRI ING. CSC.;DOLECEK KAREL ING.
分类号 C04B28/36;(IPC1-7):C04B28/36 主分类号 C04B28/36
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