| 摘要 |
<p>A laser structure is disclosed achieving high reliability, good bandwidth and performance characteristics. Further, a fabrication process is disclosed that is compatible with other IC devices by providing an active lasing region (44) below an optical mode confining ridge (4). The active region (44) is preferably a multiple quantum well (MQW) that is sandwiched between upper and lower cladding layers (40, 48). The portions (54, 56) of the MQW region (44) lateral to the ridge (4) are compositionally disorderd to give them a larger bandgap energy and lower refractive index than the active MQW region (44), and thus resist charge carrier spreading from the MQW. The ridge (4) provides the primary optical mode confinement, allowing a shallow burial of the MQW to a depth less than 0.5 microns. This permits the compositional disordering of the lateral MQW regions (54, 56) to be performed by a heated ion implantation process that requires a lower temperature than separate implantation and annealing, and is compatible with the provision of additional circuitry on the same substrate (2). <IMAGE></p> |
