| 摘要 |
<p>PURPOSE:To enable obtaining a mechanically stable thin-film non-linear two- terminal element having arbitrary characteristics by forming a first electrode on an insulating substrate, by providing an insulator layer, where SiC film is held between SiO2 films, on the first electrode and further by forming a second electrode in the upper part of the insulator layer. CONSTITUTION:A conductive film such as ITO(Indium Tin Oxide) film is pattern-formed as a first electrode 2 on an insulating substrate 1, and SiO2 film 3, SiC film 4 and SiO2 film 5 are successively heaped on the first electrode to form an insulator layer. The whole circumference of the SiC film 4 is surrounded by the SiO2 film 5. Further, the ITO film is pattern-formed as a second electrode 6 in the upper part of this SiO2 film 5.</p> |
