发明名称 THIN FILM SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To guide excellent light in and out on one main surface side of a glass substrate without any damage due to an etchant by depositing a light- transmissive protection film on the nearly entire surface on the main surface side. CONSTITUTION:On one main surface side of the glass substrate 1 made of nonalkaki glass, the protection film 2 is formed of tin oxide, tantalum oxide, etc., to about 50 - 100Angstrom thickness so as to secure light transmissivity. On the other main surface side, a thin film transistor 3 is formed. The film 2 is never affected by the etchant such as an HI solution used for respective processes wherein 1st and 2nd semiconductor areas 3a and 3b, a gate insulating film 3c, and an electrode 4d are formed. This device can, therefore, be used suitably as the panel of an active matrix type liquid crystal display device which has many thin film transistors formed on the other main surface of a glass substrate 1.</p>
申请公布号 JPH0485520(A) 申请公布日期 1992.03.18
申请号 JP19900201782 申请日期 1990.07.30
申请人 KYOCERA CORP 发明人 TANAKA KIYONARI;YAMAGUCHI NORITOSHI;NITTA YOSHITERU;TOMITA KENJI
分类号 G02F1/136;G02F1/1368;H01L21/306;H01L21/336;H01L27/12;H01L29/78;H01L29/786 主分类号 G02F1/136
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