Semiconductor element manufacturing process.

摘要

A method of manufacturing a semiconductor device comprising the steps of forming a semiconductor element on one of major surfaces of a GaAs substrate; grinding the other surface of the GaAs substrate with a grinding stone having an average grain size of about 6 mu m or larger to make the GaAs substrate to a predetermined thickness; and chemical etching the other surface of the substrate by 0.6 mu m or more just after the grinding step, without any further grinding treatment done on this other surface.