| 摘要 |
<p>Method for deposit of a p type dopant from a dopant layer (24, 24a, 24b) into a predetermined region (25a, 25b) of a III-V semiconductor layer or multiple layers. The p type dopant is deposited in very high concentration in a semiconductor layer adjacent to the predetermined region. A second semiconductor layer (27, 27a, 27b), doped with a lower concentration of an n type dopant, is later deposited so that the high concentration p type dopant layer lies between the predetermined region and the n type dopant layer. The p type dopant is diffused into the predetermined region by thermally driven diffusion, which may be carried out at a lower temperature or for a shorter diffusion time interval than with conventional diffusion, and p type dopant diffusion may extend over greater distances. <IMAGE></p> |
