| 摘要 |
The ratio between variations in the oxygen concentration before and after a silicon wafer is subjected to two types of heat treatments in which the temperatures and processing times are different is defined. The silicon wafer is subjected to a first heat treatment, and the interstitial oxygen concentrations before and after the first heat treatment are respectively set to [Oi]1ini and [Oi]1af. The silicon wafer is successively subjected to second and third heat treatments, and the interstitial oxygen concentrations before and after the second and third heat treatments are respectively set to [Oi]2ini and [Oi]2af. At this time, the interstitial oxygen concentrations [Oi]1ini, [Oi]1af, [Oi]2ini and [Oi]2af are so set as to satisfy the condition that ([Oi]2ini-[Oi]2af)/[Oi]1ini-[Oi]1af)>/=20.
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