| 摘要 |
Resin compositions for the inner coat of semiconductors which include (A) 100 parts by weight of a polysiloxane having vinyl groups and having a viscosity of 100 to 800cP at 25 DEG C., said polysiloxane having a general formula <IMAGE> in which V represents a vinyl group, Me represents a methyl group, Ph represents a phenyl group, R represents a methyl group or a phenyl group and both k and l represent natural numbers which are variables within the range of 0.01</=l/(k+l)</=0.2, (B) 1 to 35 parts by weight of a polysiloxane haivng a viscosity of 2 to 500cP at 25 DEG C., said polysiloxane having a general formula <IMAGE> in which Me represents a methyl group, and both m and n represent natural numbers which are variables within the range of 0.05</=n/(M+n)</=0.3, (C) 0.1 to 20% by weight of a organopolysiloxane per total amount of the above-described (A) plus (B), the organopolysiloxane having, per molecule, at least one hydrogen atom bound with a silicon atom and at lest one group having the general formula (R1O)3SiCH2CH2- in which R1 represents a lower alkyl group or a group R2(OCH2CH2)p- in which R2 represents a methyl group or an ethyl group and p represents a positive number of 3 or less, and (D) platinum catalyst for the addition reaction are provided.
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| 申请人 |
TOMOEGAWA PAPER CO., LTD.;CHISSO CORPORATION |
发明人 |
TAKAYANAGI, KAZUHIRO;TSUCHIDA, MASAYUKI;KOSHIMURA, ATSUSHI;OHTAKE, NOBUMASA;KIMURA, TAMIO |
