| 摘要 |
PURPOSE:To obtain the title broad single crystal in high efficiency by drawing a single crystal horizontally on a liquid supporting material so as to allow it to slide thereon to ensure a large area smooth plane to be utilized as a substrate. CONSTITUTION:Firstly, a supporting material 4 (e.g. lead) higher in specific gravity but lower in melting point than a material to be aimed for single crystal (e.g. silicon) is heated by a heater 5 to a temperature higher than the melting point of the object material and melted. Thence, the resulting melt surface is fed with a solid raw material for the object material from a raw material stack 1 to effect melting into a melt 3. A seed crystal 7 for the object material is then brought into contact with the melt 3 along with feeding a cooling gas through a feed pipe 2 onto the melt 3 to effect cooling the melt surface and grow a single crystal 6, which is then drawn horizontally along the melt surface of the supporting material 4, thus giving the objective lamellar single crystal 6. |
