| 摘要 |
PURPOSE:To improve crystallinity and to hence obtain a thin film superconducting element having desirable superconducting characteristics by emitting X-ray, during depositing of a thin film or after depositing the film, then oxidizing it, and orienting the thin film toward a c-axis. CONSTITUTION:An MgO single crystal is used as a board 5, and an oxide superconducting thin film A is formed as a thin film 6 with its crystalline phase mainly in 2212 phase emitting X-ray. Thereafter, a barrier layer 7 and the oxide superconducting thin film are patterned by tunnel junction shape by photolithography and ion milling using negative resist 9. Then, CaF2 is deposited as an interelectrode isolating layer 10 by vacuum depositing without removing the resist 9, and the surface of the thin film B is exposed by an ultrasonic cleaning with trichloroethane and a lifting-off method by an oxidizing processor 12. Eventually, a metal mask is used, brought into part contact with the film B, platium is deposited as a contact electrode 11 by an RF magnetron sputtering method to complete a thin film superconducting element 14.
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