| 摘要 |
PURPOSE:To get a new ultraviolet area semiconductor laser, an LED, and other each kind of semiconductor elements by using the heterojunction structure comprising the crystal layer of ZB structure consisting of the elements of the second cycle and the crystal layer of chalcopyrite structure. CONSTITUTION:In a semiconductor wafer, which has the heterojunction of BeCN2/BN, a BSP layer 12 as a buffer layer is formed on a beta-SiC substrate 11, and a BN layer 13 is formed hereon as the first compound semiconductor crystal layer, and hereon a BeCN2 layer 14 is formed as a second compound semiconductor crystal layer, in order. The substrate 24 stored is heated by a high frequency coil 25, and necessary gas is introduced and blown onto the substrate 26, whereby desired crystal growth can be gotten. The material gas introduced at this time is heated by a heater 26 as occasion demands, and is preliminarily decomposed.
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