| 摘要 |
A double sidewall trench capacitor cell particularly adapted for use as a memory cell capacitor of a DRAM is disclosed. The preferred embodiments of the invention include a loop shaped trench formed in the semiconductor substrate upon which the integrated circuit is formed. The trench preferably forms a closed loop and in the described embodiment is a circular trench. The sidewalls and the bottom of the trench are covered with a dielectric material. The sidewalls and bottom of the trench function as one plate of a capacitor formed by the completed structure. The dielectric layer is covered with a material which functions as a cell node and serves as the opposing plate of the capacitor structure. The cell node may be formed by filling the trench with a relatively conductive material covering substantially all of the dielectric layer in the trench. The described capacitor structure provides increased charge storage on the capacitor structure without increasing the planar area occupied by the structure.
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