| 摘要 |
PURPOSE:To enable to check contact of a bonding wire even when thickness of a chip is not made thin by a method wherein the chip made the bonding pad surface lower than the element forming surface is used as a semiconductor element. CONSTITUTION:An Si substrate 6 is a substrate obtained by separating a substrate formed with P-N junction 7, a back electrode 10, an Al bonding pad 11, etc. into a single element. The element thereof is bonded to a frame 14 by solder 15, and moreover wire bonding is performed according to a gold wire 16. At this case, a flat part 17 and another flat part 18 construct a level difference, and a gentle incline is formed between the two flat parts. According to the chip thereof, to form the element forming side thin is not necessary, and moreover to deform the lead frame itself is not necessary also, and contact of the bonding wire to the corner of the element can be checked. |
