| 摘要 |
PURPOSE:To enable to perform the favorable test of a semiconductor device by a method wherein surface protective films having different crushing strengths are laminated on the periphery of the electrode pad of a semiconductor substrate, and the periphery of the pad therein is covered with the film crushable according to pressure of a probe. CONSTITUTION:An SiO2 film 5 is formed on an Si substrate 1 having an electrode pad 2 as to cover up to the periphery of the electrode pad, and an Si3N4 film 3 is laminated thereon surrounding the pad. The SiO2 film 5 has lower crushing strength as compared with the Si3N4 film 3, and crushable according to pressure of a probe 4 at wafer test time. Accordingly, even when the probe 4 comes in contact with the covering part of the SiO2 film 5 at the periphery of the pad 2, the probe 4 is enabled to come in contact with the pad 2 under the SiO2 film 5 by crushing the film thereof, the contact impossible part of the probe on the electrode pad is removed, and quality of the circuit faculty can be judged correctly. |
