| 摘要 |
PURPOSE:To obtain a monolithic type polychrome light-emitting element enabling blue light-emission simply by disposing separate shutter to four cells each receiving Zn, Se, Ga, Ga, opening or closing the shutters while making the temperatures of these cells differ and depositing these materials on a semiconductor substrate. CONSTITUTION:Zn, Se, Ga, Ga are received in four cells 1, 2, 3, 4 each having shutters 5, 6, 7, 8, and a rotary shutter 9 covering only the cells 7 and 8 is disposed in front of the shutter 8. A substrate holder 11 on which an N type GaAs substrate 13 is pasted by an In fixing material 12 is arranged opposed to these shutters, and a mask means 14 with a large number of small holes 15 turned by a control means 17 and a driving means 16 is formed in front of the holder 11 while the shutter 9 is rotated by a motor 10. Accordingly, the cells 1, 2, 3, 4 are each heated at 300, 200, 400, 600 deg.C and the substrate 13 is heated up to 360 deg.C, and the materials are flown to the substrate 13 and a thin-film emitting blue light is applied. |
