发明名称 PATTERN FORMING METHOD
摘要 PURPOSE:To allow sufficient contact even to a rugged surface having a relatively large difference in height and to form pattern having good accuracy and film thickness in a short period of time by using a dry film resist essentially consisting of a specific photosensitive compsn. CONSTITUTION:A soln. prepd. by dissolving a photosensitive resin into an org. solvent is supplied onto the substrate having ruggedness and is dried or half dried to form a photosensitive resin intermediate layer having alkaline developability of 20 to 130 acid value. The dry film resist having the alkaline developability is then laminated in this photosensitive resin intermediate layer. The dry film resist to be used consists essentially of the photosensitive compsn. consisting of 30 to 70wt.% carboxylic acid-contg. acrylic polymer of 80 to 220 acid value, 30 to 70wt.% compd. having carbon-carbon double bonds in the molecule, and 0.01 to 15wt.% photoinitiator. The resist is allowed sufficient contact even to the rugged surface having the relatively large difference in height and the good patterns is easily formed in a short period of time in this way and the resulted patterns have the good accuracy and film thickness.
申请公布号 JPH0484137(A) 申请公布日期 1992.03.17
申请号 JP19900197826 申请日期 1990.07.27
申请人 MITSUBISHI RAYON CO LTD 发明人 KUSHI KENJI;INUKAI KENICHI
分类号 G03F7/027;G03F7/26;H05K3/28 主分类号 G03F7/027
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