Method of dicing semiconductor wafers which produces shards less than 10 microns in size

摘要

A method (and semiconductor devices and wafers producers therefrom) is provided which method comprises providing a semiconductor wafer which comprises at least two physically interconnected semiconductor devices including at least one scribe lane formed at a peripheral edge between the semiconductor devices; covering at least a portion of the scribe lane with a continuous metal film, forming metal limiting means in the metal film of predetermined configuration and spacing so that no space between the metal limiting means exceeds 10 microns in any direction; and thereafter scribing the semiconductor wafer to produce a device containing bent metal portions within the range of 0 to 10 microns.