发明名称 CHARGE COUPLED SEMICONDUCTOR DEVICE
摘要 PURPOSE:To increase density by distributing charges from a vertical shift register to two horizontal shift registers. CONSTITUTION:Transfer electrodes 38-42 of a horizontal shift register operates as storage electrodes and electrodes 43-47 operate as barrier electrodes. Areas 52-59 are areas for generating a potential barrier at gap parts of the storage electrodes 38-42. Two transfer electrodes are arranged corresponding to one vertical shift register. Further, two transfer gate electrodes 50 and 51 are arranged between two horizontal shift registers 31 and 32. Areas 60 and 61 shown as shaded parts are channel stoppers. One vertical shift register is arranged for every two electrodes of the horizontal shift register, so the horizontal density is made twice as large as that obtained by arranging one vertical shift register for every four electrodes of the horizontal shift register as usual.
申请公布号 JPS6083299(A) 申请公布日期 1985.05.11
申请号 JP19830191505 申请日期 1983.10.13
申请人 NIPPON DENKI KK 发明人 ODA HIDETSUGU
分类号 G11C27/04;H01L21/339;H01L29/762;H04N5/335;H04N5/341;H04N5/372 主分类号 G11C27/04
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