| 摘要 |
PURPOSE:To obtain low consumption SRAM by forming an insulation film which is a capacitor and a conductor film which is an electrode of said capacitor on the upper layer of the conductor film which is a gate electrode of a memory transistor and connecting electrically a part of the conductor film which is the electrode of the capacitor with GND. CONSTITUTION:After the formation of memory transistors 6 and 7 with access transistors 9 and 10, the gate electrodes of the memory transistors are formed with a Poly - Si film where an SiO2 is further formed on the upper layer based on a thermal oxidation method. Then, a Poly - Si film is formed so as to serve as an electrode of a capacitor. Only the portion which can be used as the electrode of the capacitor on the upper layer of the gate electrodes of the memory transistors 6 and 7 are patterned. As it is arranged that the electric charge required to write in memory be stored in the capacitor 18, it is possible to expand the margin capable of maintaining the level of H for a connection point 5. This construction makes it possible to obtain a memory cell which reduces standby current and low consumption power of SRAM. |
