| 摘要 |
PURPOSE:To ensure a sufficient capacitor capacity even when a memory size is reduced by a method wherein the thickness in one part of a first conductive layer constituting the lower-part electrode of a capacitor is made thicker than the thickness in parts other than one part of the first conductive layer. CONSTITUTION:Lower-part electrodes 9a, 9b are connected respectively to impurity diffusion layers 6a, 6d. Upper-part electrodes 11 are formed respectively on the lower-part electrodes 9a, 9b via a dielectric layer 10. At the lower-part electrode 9b of a capacitor which is connected to the impurity diffusion layer 6b and which has been formed so as to be extended on a gate electrode 4b and an element isolation region 2, its end part formed on the element isolation region 2 is formed to be thicker than the thickness in parts other than the end part. Thereby, the surface area of the capacitor is increased by a portion corresponding to the thickness. When a DRAM is integrated, a capacitor capacity can be increased by the same plane area as in conventional cases. As a result, even when the DRAM is integrated and a memory size is reduced, it is possible to ensure a sufficient capacitor capacity from a view-point of the stable operation and the reliability of the DRAM. |
