| 摘要 |
PURPOSE:To form plural laminated thin films effectively with small installation area in case of formig an amorphous semiconductor thin film of plural layers on the surface of a base plate with a plasma CVD method by arranging each thin film forming chamber circularly with a rotary shaft as the center. CONSTITUTION:Four reaction chambers 12a-12d are circularly arranged around a rotary shaft 11. First, a base plate 24 is fitted to a base plate electrode 14a of the reaction chamber 12a and gaseous mixture of (B2H6+SiH4) is introduced to the inside of the chamber as gaseous raw material and high-frequency voltage is impressed between a discharge electrode 15a and the base electrode 14a to execute glow discharge. The gaseous raw material is decomposed by generating plasma with this glow discharge to form a p type amorphous silicon thin film on the base plate is transferred in the order of the reaction chamber 12b, 12c by rotating the rotary shaft 11 90 deg. by 90 deg. and also the gaseous raw material is changed to (PH3+SiH4) from (SiH4+H2) to laminate i-type and n type amorphous silicon thin films by plasma. Last, an aluminum film is vapor-deposited thereon in the reaction chamber 12d to complete it to a solar cell or the like. |
