| 摘要 |
PURPOSE:To improve the ability to write, rewrite and retain information by making a recording material which is composed (GaSb)100-x(Vb2VIb3)x which can hardly become amorphous but does not take time to become crystallized and is highly stable in the amorphous phase and Vb2, VIb3 which does not take time to become crystallized, becomes easily amorphous and has a higher crystallization temperature than Te. CONSTITUTION:Vb2VIb3 of recording material is composed of group Vb element and group VIb element of the periodic table, and is a chemical quantum compound expressed by Vb2VIb3 in a chemical formula or a blend of more than two types of this chemical quantum compound. In addition, the range of x is 7mol%<=x<=95mol%. A 100nm-thick SiO2 substrate protecting layer 2, a 100nm-thick recording material layer 3 of (GaSb)5(Sb2Te3)95, a 20nm-thick SiO2 protecting layer 4, a 100nm-thick Au thermal diffusion layer 5, an ultraviolet- curable resin adhesive layer 6 and a 1.2mm-thick acrylic resin protecting plate 7 are laminated on a 1.2mm-thick acrylic resin substrate 1. |
