| 摘要 |
PURPOSE:To enhance an integration density by a method wherein the lower-part electrode of a capacity element which uses a ferroelectric layer as a substrate is formed on a high-concentration diffusion layer of a semiconductor substrate. CONSTITUTION:A connecting hole is made in SiO2 106 of an interlayer insulating film and a gate oxide film 103 which are situated on a high-density diffusion layer 102 in a region in which the lower-part electrode of a capacity element is formed. Then, platinum 107 to be used as the lower-part electrode is formed; in succession, a ferroelectric layer 108 is formed. Then, a photo-resist is formed on the layer 108; after that, the photoresist to be used as a mask layer is left, by using a photolithographic technique, in a region to be used as the capacity element. Then, two layers, the layer 108 in a region not to be used as the capacity element and the platinum 107 to be used as the lower-part electrode, are removed simultaneously by a sputter etching operation or the like. After that, the photoresist layer which has been used as the mask layer is removed. It is possible to manufacture a semiconductor device whose cost is low and whose integration density is high. |
