| 摘要 |
PURPOSE:To reduce the number of wirings while enabling driving at a TTL level normally used by unifying a high withstanding-voltage field-effect semiconductor device and a logic circuit, such as a shift register, a latch, a gate, etc. CONSTITUTION:An insulator layer 31 is attached to a p-type semiconductor substrate 30, and n-type ions are implanted partially to form an n-type ion implantation layer 41 to the substrate 30. Thick insulating substance layers 33 are shaped through oxidation, and a p-type impurity is ion-implanted or diffused from openings 35, 37 to form p-type impurity layers 42. An n-type impurity is diffused similarly to shape n-type impurity layers 43-1-43-4. Accordingly, a high withstanding-voltage field-effect semiconductor device and a logic circuit are unified and manufactured by using a DSA technique, thus simplifying a manufacturing process, then easily preparing the circuit because the manufacture is performed with the same semiconductor substrate 30. |
